丽晶美能（北京）电子技术有限公司

IGBT Discrete device

typ. value at Tj=25℃ unless otherwise noted

Parts name	V_CES (V)	I_C@T_C =100℃ (A)	V_CE(sat) (V)	V_GE(th) (V)	E_on (mJ)	E_off (mJ)	Package (mm)	Operating Temperature (℃)

LEGP30N65AH	650	30	2.05	5.1	1.13	0.40	TO-247	-55~150
LEGP20N120AH	1200	20	1.6	5.8	1.67	0.86	TO-247	-55~150
LEGP25N120AH	1200	25	1.8	5.8	1.86	1.22	TO-247	-55~150
LEGP30N120AH	1200	30	1.7	5.8	2.0	1.32	TO-247	-55~150
LEGP50N120AK	1200	50	2.0	5.8	6.6	3.24	TO-247	-55~150
LEGP30N160AH	1600	30	1.9	5.8	5.0	2.28	TO-247	-55~150